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| FDMS8660S N-Channel PowerTrench(R) SyncFETTM August 2006 FDMS8660S N-Channel PowerTrench(R) SyncFETTM 30V, 40A, 2.4m Features General Description Max rDS(on) = 2.4m at VGS = 10V, ID = 25A Max rDS(on) = 3.5m at VGS = 4.5V, ID = 21A Advanced Package and Silicon combination for low RDS(ON) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design RoHS Compliant tm The FDMS8660S has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(ON) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Application Synchronous Rectifier for DC/DC Converters Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Telecom secondary side rectification Pin 1 S S 5 S G 4 3 2 1 6 7 D D D D MLP5x6 (Bottom view) 8 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation TC = 25C TA = 25C (Note 1a) TC = 25C TC = 25C TA = 25C (Note 1a) Ratings 30 20 40 147 25 200 83 2.5 -55 to +150 W C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.5 50 C/W Package Marking and Ordering Information Device Marking FDMS8660S Device FDMS8660S Package MLP5X6 Reel Size 13'' Tape Width 12mm Quantity 3000 units (c)2006 Fairchild Semiconductor Corporation FDMS8660S Rev.C (W) 1 www.fairchildsemi.com FDMS8660S N-Channel PowerTrench(R) SyncFETTM Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 1mA, VGS = 0V ID = 1mA, referenced to 25C VDS = 24V, VGS = 0V VGS = 20V, VGS = 0V 30 35 500 100 V mV/C A nA On Characteristics (Note 2) VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 1mA ID = 1mA, referenced to 25C VGS = 10V, ID = 25A VGS = 4.5V, ID = 21A VGS = 10V, ID = 25A ,TJ = 125C VDS = 10V, ID = 25A 1 1.5 -6 1.9 2.6 2.9 123 2.4 3.5 3.9 S m 2 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz 4342 1213 425 1.0 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qg(4.5V) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 10V Total Gate Charge at 4.5V Gate to Source Gate Charge Gate to Drain "Miller" Charge VGS = 0V to 10V VGS = 0V to 4.5V VDS = 15V, ID = 25A VGS = 10V VDD = 15V, ID = 1A VGS = 10V, RGEN = 6 17 12 76 50 81 44 11 16 nC nC 31 22 122 80 113 ns ns ns ns nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 2.2A (Note 2) 0.37 35 98 0.7 V ns nC IF = 25A, di/dt = 300A/s Notes: 1: RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a. 50C/W when mounted on a 1 in2 pad of 2 oz copper b. 125C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. FDMS8660S Rev.C (W) 2 www.fairchildsemi.com FDMS8660S N-Channel PowerTrench(R) SyncFETTM Typical Characteristics TJ = 25C unless otherwise noted 120 100 ID, DRAIN CURRENT (A) VGS = 10V VGS = 6.0V VGS = 4.5V PULSE DURATION = 300s DUTY CYCLE = 2%MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 VGS = 3.0V PULSE DURATION = 300s DUTY CYCLE = 2%MAX 80 60 40 20 0 0.0 VGS = 3.5V VGS = 3.5V VGS = 3.0V VGS = 10V VGS = 6V VGS = 4.5V 0.4 0.8 1.2 1.6 VDS, DRAIN TO SOURCE VOLTAGE (V) 2.0 20 40 60 80 ID, DRAIN CURRENT(A) 100 120 Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 8 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 1.4 1.2 1.0 0.8 0.6 -50 ID = 25A VGS = 10V 7 6 5 4 3 2 1 2 ID = 25A PULSE DURATION = 300s DUTY CYCLE = 2%MAX TJ = 125oC TJ = 25oC -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 3 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature 90 80 ID, DRAIN CURRENT (A) 70 60 50 40 30 20 10 0 1.0 TJ = -55oC TJ = 25oC TJ = 125oC PULSE DURATION = 300s DUTY CYCLE = 2%MAX Figure 4. On-Resistance vs Gate to Source Voltage 10 IS, REVERSE DRAIN CURRENT (A) VGS = 0V 1 TJ = 125oC TJ = 25oC 0.1 0.01 TJ = -55oC 1.5 2.0 2.5 3.0 VGS, GATE TO SOURCE VOLTAGE (V) 3.5 1E-3 0.0 0.1 0.2 0.3 0.4 0.5 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V) 0.7 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMS8660S Rev.C (W) 3 www.fairchildsemi.com FDMS8660S N-Channel PowerTrench(R) SyncFETTM Typical Characteristics TJ = 25C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) 10 ID = 25A 10 VDS = 10V 4 Ciss 8 6 4 2 0 CAPACITANCE (pF) VDS = 15V Coss 10 3 VDS = 20V Crss f = 1MHz VGS = 0V 0 10 20 30 40 50 60 Qg, GATE CHARGE(nC) 70 80 90 10 0.1 2 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 80 ID, DRAIN CURRENT (A) 70 60 50 VGS = 4.5V VGS = 10V 30 IAS, AVALANCHE CURRENT(A) 10 TJ = 25oC 40 30 20 o Limited by Package RJC = 1.5 C/W 1 0.1 1 10 100 1000 3000 tAV, TIME IN AVALANCHE(ms) 10 25 50 75 100 125 o 150 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 1000 P(PK), PEAK TRANSIENT POWER (W) Figure 10. Maximum Continuous Drain Current vs Case Temperature 3000 1000 VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 150 - T A ----------------------125 TA = 25oC ID, DRAIN CURRENT (A) 100 1ms 10 1 0.1 0.01 0.01 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED TA = 25OC 100 10ms 100ms 1s 10s DC I = I25 10 1 SINGLE PULSE 0.1 1 10 100 0.1 -3 10 10 -2 VDS, DRAIN to SOURCE VOLTAGE (V) 10 10 10 t, PULSE WIDTH (s) -1 0 1 10 2 10 3 Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation FDMS8660S Rev.C (W) 4 www.fairchildsemi.com FDMS8660S N-Channel PowerTrench(R) SyncFETTM Typical Characteristics TJ = 25C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 1E-3 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA -1 0 1 2 3 1E-4 -3 10 10 -2 10 10 10 10 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDMS8660S Rev.C (W) 5 www.fairchildsemi.com FDMS8660S N-Channel PowerTrench(R) SyncFETTM Typical Characteristics (continued) SyncFET Schottky body diode Characteristics Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MoSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverses recovery characteristic of the FDMS8660S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. IDSS, REVERSE LEAKAGE CURRENT (A) 0.1 TJ = 125oC 0.01 CURRENT : 0.8A/DIV 1E-3 TJ = 100oC 1E-4 TJ = 25oC 1E-5 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) T IM E : 12.5 n S /D iv Figure 14. FDMS8660S SyncFET body diode reverse recovery characteristic Figure 15. SyncFET body diode reverses leakage versus drain-source voltage FDMS8660S Rev.C (W) 6 www.fairchildsemi.com FDMS8660S N-Channel PowerTrench(R) SyncFETTM Power QFN, 8 Leads Marketing drawing reference : MKT- PQFN08A rev. A FDMS8660S Rev.C (W) 7 www.fairchildsemi.com FDMS8660S N-Channel PowerTrench(R) SyncFETTM TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I20 FDMS8660S Rev. C (W) 8 www.fairchildsemi.com |
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